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1

A new lifetime prediction method for hot-carrier degradation in n-MOSFETs with ultrathin gate oxides under Vg=Vd

Fuchen Mu, Mingzhen Xu, Changhua Tan, Xiaorong Duan

Journal:

Microelectronics Reliability

Year:

2001

Language:

english

File:

PDF, 94 KB

english, 2001

2

Stress-induced high-field gate leakage current in ultra-thin gate oxide

Jianlin Wei, Lingfeng Mao, Mingzhen Xu, Changhua Tan, Xiaorong Duan

Journal:

Solid-State Electronics

Year:

2000

Language:

english

File:

PDF, 119 KB

english, 2000

3

Proportional difference estimate method of determining characteristic parameters of normal and log–normal distributions

Fuchen Mu, Changhua Tan, Mingzhen Xu

Journal:

Microelectronics Reliability

Year:

2001

Language:

english

File:

PDF, 79 KB

english, 2001

4

The effect of image potential on electron transmission and electric current in the direct tunneling regime of ultra-thin MOS structures

Lingfeng Mao, Changhua Tan, Mingzhen Xu

Journal:

Microelectronics Reliability

Year:

2001

Language:

english

File:

PDF, 119 KB

english, 2001

5

A new method of studying on the dynamic parameters of bulk traps in thin SiO2 layer of MOS structures

Xie Bing, He Yandong, Xu Mingzhen, Tan Changhua

Journal:

Microelectronics Reliability

Year:

2000

Language:

english

File:

PDF, 104 KB

english, 2000

6

Effect of reverse substrate bias on ultra-thin gate oxide n-MOSFET degradation under different stress modes

Yao Zhao, Mingzhen Xu, Changhua Tan

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 169 KB

english, 2006

7

Correlation between Si–SiO2 heterojunction and Fowler–Nordheim conduction mechanism after soft breakdown in ultrathin oxides

Changhua Tan, Mingzhen Xu

Journal:

Solid State Communications

Year:

2006

Language:

english

File:

PDF, 120 KB

english, 2006

8

Erratum to “The effect of image potential on electron transmission and electric current in the direct tunneling regime of ultra-thin MOS structures” [Microelectronics Reliability 2001;41:927–931]

Lingfeng Mao, Changhua Tan, Mingzhen Xu

Journal:

Microelectronics Reliability

Year:

2002

Language:

english

File:

PDF, 30 KB

english, 2002

9

An analytical expression for predicting wearout lifetime of thin gate and tunneling oxide

Mingzhen Xu, Changhua Tan

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 237 KB

english, 2002

10

Weibull characteristics of n-MOSFET's with ultrathin gate oxides under FN stress and lifetime prediction

Fuchen Mu, Mingzhen Xu, Changhua Tan, Xiaorong Duan

Journal:

Microelectronics Reliability

Year:

2002

Language:

english

File:

PDF, 115 KB

english, 2002

11

The effect of transition region on the direct tunneling current and Fowler–Nordheim tunneling current oscillations in ultrathin MOS structures

Lingfeng Mao, Heqiu Zhang, Changhua Tan, Mingzhen Xu

Journal:

Microelectronics Reliability

Year:

2002

Language:

english

File:

PDF, 272 KB

english, 2002

12

Extended Arrhenius law of time-to-breakdown of ultrathin gate oxides

Xu, Mingzhen, Tan, Changhua, Li, MingFu

Journal:

Applied Physics Letters

Year:

2003

Language:

english

File:

PDF, 239 KB

english, 2003

13

Study of deep traps using the frequency-dependence of the temperature derivative of PN junction capacitance

Changhua Tan, Mingzhen Xu

Journal:

Solid-State Electronics

Year:

1989

Language:

english

File:

PDF, 595 KB

english, 1989

14

A spectral analysis method to directly determine minority carrier generation lifetime using the pulsed MOS structure

Mingzhen Xu, Changhua Tan, Yandong He, Yangyuan Wang

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 359 KB

english, 1994

15

Analysis of the rate of change of inversion charge in thin insulator p-type Metal-Oxide-Semiconductor structures

Mingzhen Xu, Changhua Tan, Yandong He, Yangyuan Wang

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 396 KB

english, 1995

16

Low field stress induced double donor defect in metal oxide silicon structures

Mingzhen Xu, Changhua Tan

Journal:

Solid State Communications

Year:

2003

Language:

english

File:

PDF, 227 KB

english, 2003

17

The SILC study by PDO method

Z(i)ou Wang, Heqiu Zhang, Mingzhen Xu, Changhua Tan

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 286 KB

english, 2004

18

Effects of plasma nitridation on ultra-thin gate oxide electrical and reliability characteristics

Yandong He, Mingzhen Xu, Changhua Tan

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 311 KB

english, 2005

19

The degradation of p-MOSFETs under off-state stress

Cunyu Yang, Ziou Wang, Changhua Tan, Mingzhen Xu

Journal:

Microelectronics Journal

Year:

2001

Language:

english

File:

PDF, 142 KB

english, 2001

20

Measurements of the widths of transition regions at Si–SiO2 interfaces in metal-oxide–semiconductor structures from quantum oscillations in Fowler–Nordheim tunneling current

Lingfeng Mao, Changhua Tan, Mingzhen Xu

Journal:

Solid State Communications

Year:

2001

Language:

english

File:

PDF, 89 KB

english, 2001

21

An accurate relationship for determining the key parameters of MOSFETs by proportional difference operator method

Jinyan Wang, Mingzhen Xu, Changhua Tan

Journal:

Solid-State Electronics

Year:

2000

Language:

english

File:

PDF, 168 KB

english, 2000

22

Proportional difference estimate method of determining the characteristic parameters of monomodal and multimodal Weibull distributions of time-dependent dielectric breakdown

Fuchen Mu, Changhua Tan, Mingzhen Xu

Journal:

Solid-State Electronics

Year:

2000

Language:

english

File:

PDF, 116 KB

english, 2000

23

Study of Fowler–Nordheim tunneling current oscillations of thin insulator MOS structure by wave interference method

Lingfeng Mao, Changhua Tan, Mingzhen Xu

Journal:

Solid-State Electronics

Year:

2000

Language:

english

File:

PDF, 316 KB

english, 2000

24

Direct tunneling relaxation spectroscopy in ultra-thin gate oxide MOS structures

Jianlin Wei, Lingfeng Mao, Mingzhen Xu, Changhua Tan

Journal:

Solid-State Electronics

Year:

2000

Language:

english

File:

PDF, 87 KB

english, 2000

25

A novel method for determining the effect of interface trap generation on the degradation of n-MOSFETs under different hot-carrier stress modes

Fuchen Mu, Mingzhen Xu, Changhua Tan

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 90 KB

english, 2001

26

Numerical analysis for root-mean-square roughness of SiO2/Si interface on direct tunneling current in ultrathin MOSFETs

Lingfeng Mao, Changhua Tan, Mingzhen Xu

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 177 KB

english, 2001

27

An improved method for determining the critical energy for interface trap generation of n-MOSFETs under Vg=Vd/2 stress mode

Fuchen Mu, Lingfeng Mao, Jianlin Wei, Changhua Tan, Mingzhen Xu

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 110 KB

english, 2001

28

Numerical analysis for the effects of SiO2/Si interface roughness on quantum oscillations in ultrathin MOSFETs

Lingfeng Mao, Changhua Tan, Mingzhen Xu

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 95 KB

english, 2001

29

Numerical analysis for the effects of interface roughness on the attenuation amplitudes of Fowler–Nordheim tunneling current oscillations in ultrathin MOSFETs

Lingfeng Mao, Heqiu Zhang, Jianlin Wei, Fuchen Mu, Changhua Tan, Mingzhen Xu

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 133 KB

english, 2001

30

Low frequency current noise in 2.5 nm MOSFET and fractal dimension of soft breakdown

Zongliang Huo, Lingfeng Mao, Mingzhen Xu, Changhua Tan

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 207 KB

english, 2003

31

Application of the proportional difference time analysis to study carrier generation rate in MOS structures

Tan Changhua, Xu MiNgzhen, He Yandong

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 307 KB

english, 1998

32

Dispersive decay of positive oxide charge after high-field stress

Yongjun Wu, Changhua Tan, Mingzhen Xu, Jinyan Wang, Yangyuan Wang

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 191 KB

english, 1998

33

Proportional difference operator method and its application in studying subthreshold behavior of MOSFETs

Changhua Tan, Mingzhen Xu, Ziou Wang

Journal:

Solid-State Electronics

Year:

2000

Language:

english

File:

PDF, 215 KB

english, 2000

34

The frequency spectrum of reciprocal capacitance and its derivative in MOS systems

Mingzhen Xu, Changhua Tan

Journal:

Solid-State Electronics

Year:

1986

Language:

english

File:

PDF, 534 KB

english, 1986

35

Theoretical investigation on the structural and electronic properties of complexes formed by N7,N9-dimethylguaninium and different anions

Dianxiang Xing, Xuejie Tan, Changhua Zhang, Yuxiang Bu

Journal:

Journal of Molecular Structure: THEOCHEM

Year:

2010

Language:

english

File:

PDF, 552 KB

english, 2010

36

Mos constant current quasi-static smallsignal technique for determination of low interface states distribution of Si−SiO2system

Tan Changhua, Xu Mingzhen, Li Shudong

Journal:

Journal of Electronics (China)

Year:

1987

Language:

english

File:

PDF, 238 KB

english, 1987

37

Dynamic oxide voltage relaxation spectroscopy

Mingzhen Xu, Changhua Tan, Yandong He, Xiaowei Liu, Yangyuan Wang

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 846 KB

english, 1996

38

Proportional difference estimate method for bimodal and multimodal failure distributions

Fuchen Mu, Changhua Tan, Mingzhen Xu

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 115 KB

english, 2001

39

A high-efficiency overmoded klystron-like relativistic backward wave oscillator with low guiding magnetic field

Xiao, Renzhen, Tan, Weibing, Li, Xiaoze, Song, Zhimin, Sun, Jun, Chen, Changhua

Journal:

Physics of Plasmas

Year:

2012

Language:

english

File:

PDF, 1.26 MB

english, 2012

40

Defect band structure investigation of postbreakdown SiO2

Xu, Mingzhen, Tan, Changhua

Journal:

Applied Physics Letters

Year:

2008

Language:

english

File:

PDF, 438 KB

english, 2008

41

Targeting human embryonic stem cells with quantum dot-conjugated phages

Zhao, Wenxiu, Jin, Lei, Yuan, Hang, Tan, Zhiyang, Zhou, Changhua, Li, Lin Song, Ma, Lan

Journal:

Scientific Reports

Year:

2013

Language:

english

File:

PDF, 1.61 MB

english, 2013

42

Influences of the Modulation Cavity and Extraction Cavity on Microwave Generation and Starting Oscillation in a Klystron-Like Relativistic Backward Wave Oscillator

Xiao, Renzhen, Chen, Changhua, Tan, Weibing, Teng, Yan

Journal:

IEEE Transactions on Electron Devices

Year:

2014

Language:

english

File:

PDF, 1.16 MB

english, 2014

43

Research on the Emission Uniformity of Explosive Emission Cathodes in Foilless Diodes

Sun, Jun, Wu, Ping, Huo, Shaofei, Tan, Weibing, Shao, Hao, Chen, Changhua, Liu, Guozhi

Journal:

IEEE Transactions on Plasma Science

Year:

2014

Language:

english

File:

PDF, 1.49 MB

english, 2014

44

Defect Size Effect and Defect Band Conduction of Ultrathin Oxides After Degradation and Breakdown

Mingzhen Xu,, Changhua Tan,

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 101 KB

english, 2009

45

[IEEE 4th International Conference on Solid-State and IC Technology - Beijing, China (24-28 Oct. 1995)] Proceedings of 4th International Conference on Solid-State and IC Technology - Dynamic oxide current relaxation spectroscopy for thin insulator MOS structure under Fowler-Nordheim stresses

Mingzhen Xu,, Changhua Tan,, Yandong He,, Xiaowei Liu,, Zhiyun Chen,, Xiaorong Duan,, Yangyuan Wang,

Year:

1995

Language:

english

File:

PDF, 269 KB

english, 1995

46

[IEEE 6th International Conference on Solid-State and IC Technology - Shanghai, China (22-25 Oct. 2001)] 2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) - The experimental investigation on stress-induced leakage current under Fowler-Nordheim constant voltage stress

Jianlin Wei,, Langfeng Mao,, Mingzhen Xu,, Changhua Tan,

Year:

2001

Language:

english

File:

PDF, 192 KB

english, 2001

47

A new technique for determining the capture cross section of the oxide traps in MOS structures

Mingzhen Xu,, Changhua Tan,, Yangyuan Wang,

Journal:

IEEE Electron Device Letters

Year:

1991

Language:

english

File:

PDF, 195 KB

english, 1991

48

[IEEE 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT) - Beijing, China (2008.10.20-2008.10.23)] 2008 9th International Conference on Solid-State and Integrated-Circuit Technology - Defect current and defect band conduction of ultrathin oxides after degradation and breakdown

Mingzhen Xu,, Changhua Tan,

Year:

2008

Language:

english

File:

PDF, 450 KB

english, 2008

49

[IEEE Fifth International Conference on Solid-State and Integrated Circuit Technology-ICSICT'98 - Beijing, China (21-23 Oct. 1998)] 1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105) - A reliability analysis tool of small dimension MOS device based on relaxation spectroscopy technique

Jianlin Wei,, Yi Liang,, Mingzhen Xu,, Changhua Tan,

Year:

1998

Language:

english

File:

PDF, 113 KB

english, 1998

50

[IEEE 6th International Conference on Solid-State and IC Technology - Shanghai, China (22-25 Oct. 2001)] 2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) - Another way to investigate the characteristics of time-dependent dielectric breakdown of ultra-thin oxides

Fuchen Mu,, Mingzben Xu,, Changhua Tan,, Xiaorong Duan,

Year:

2001

Language:

english

File:

PDF, 205 KB

english, 2001